Details

Tungsten crucible and tube




Key words:

Tungsten Crucible

Tungsten Tube

Tungsten Plate

Tungsten Rod


Product Description


Ⅰ、Physical and chemical properties

 1  Purity :W≥99.95%;

 2  Density:≥18.2g/cm3

 3  Application temperature environment:2300℃。

 

Ⅱ、Measurements and tolerances

Unit:mm

Delivery condition

Specification

Tolerance

Thickness

Roughness   (μm)

Diameter

Height

Diameter

Height

Sinter

10~500

10~750

±5.0

±5.0

8~20

 

Finished sinter

10~450

10~550

±0.5

±1.0

7~18

<2.5

Special sizes can be manufactured based on customers' requirements

 

Manufacturing process and equipment

Item

Process

Equipment

Quality Check point

1

Tungsten powder

 

1  Purity of tungsten powder

2

Sieving

High frequency vibrating screen

2  FsssHB

3

Mixed powder

V shape mixer

3  Green strength

4

Isostatic pressing

Isostatic pressing machine

1  Measurement of rough-processed billet

5

Rough billet lathing

CNC vertical turning machine

2  Surface quality of rough-processed billet

6

IF sintering

IF induction sintering furnace

1  Outside measurements of finished product

7

Competitive products  lathing

High-accuracy vertical turning machine

2  Surface quality and roughness of finished productdensity

8

Package

 

3  Show certificate of quality

 

 Ⅳ、Application

Since the melting point of tungsten has reached 3410℃, tungsten crucible (W crucible; wolfram crucible; wolfram barrel; W barrel; wolfram tube, W tube; W pipe; wolfram pipe; wolfram sleeve; tungsten sleeve; wolfram flange; tungsten flange; W flange; wolfram funnel; tungsten funnel) is widely applied in  industry furnace such as sapphire growth furnace, quartz glass melting furnace, and rare earth smelting furnace。The temperature in working environment of tungsten crucible is above 2000℃。 For sapphire crystal growth furnace, high-purity, high- density, no internal -crack tungsten crucible with other features of exact measurement and smooth surface has decisive influence on success ratio of seed growth, quality control of pulling crystal, metamictization pot-committed and service life during sapphire growth process。